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0500DP44A1215 - 1200 /1200 MHz Diplexer (BPF/BRF)

0500DP44A1215_7293598.PDF Datasheet


 Full text search : 1200 /1200 MHz Diplexer (BPF/BRF)


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2400DP39A5425 2450 / 5400 MHz Diplexer ( BPF / BPF)
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1214-370V L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 370; P(in) (W): 50; Gain (dB): 8.7; Vcc (V): 50; Pulse Width (µsec): 330; Duty Cycle (%): 10; Case Style: 55ST-1 RF POWER TRANSISTOR
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SDR1-12 SDR1-12S SDR1-12SMS SDR1-12SMSS SDR1-12SMS 1 A, 1200 V, SILICON, SIGNAL DIODE
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SOLID STATE DEVICES INC
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QCC-20 Surface Mount Power Splitter/Combiner 2 Way-90° 50 1200 to 2200 MHz
From old datasheet system
Surface Mount Power Splitter/Combiner 2 Way-90∑ 50з 1200 to 2200 MHz
Surface Mount Power Splitter/Combiner 2 Way-9050з 1200 to 2200 MHz
MINI[Mini-Circuits]
MINI [Mini-Circuits]
APT50GT120B2RDQ2G Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: T-MAX™ [B2]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 50; 94 A, 1200 V, N-CHANNEL IGBT, TO-247
Microsemi, Corp.
APT35GN120L2DQ2 APT35GN120L2DQ2G Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: 264 MAX™ [L2]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 46; 94 A, 1200 V, N-CHANNEL IGBT
Microsemi, Corp.
Advanced Power Technology
APT75GN120J Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 68; 124 A, 1200 V, N-CHANNEL IGBT
Microsemi, Corp.
SDR4512M 45 AMP 1200 VOLTS 80 nsec RECTIFIER 45 A, 1200 V, SILICON, RECTIFIER DIODE, TO-254AA
Solid State Devices, Inc.
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STTH312B -STTH312B Ultrafast recovery - 1200 V diode
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